InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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|Selectivity (InP/SiO2)
|Selectivity (InP/SiO2)
|-
|-
|10/4/2016
|
|InP#1613
|
|0.92
|
|
|8.9
|-
|-
|12/1/2016
|
|InP#1614
|
|0.96
|
|12.1
|
|-
|12/15/2016
|InP#1615
|0.91
|9.3
|-
|1/23/2017
|InP#1701
|0.93
|9.4
|-
|2/7/2017
|InP#1702
|0.75
|7.7
|-
|2/21/2017
|InP#1703
|0.91
|11.3
|-
|3/21/2017
|InP#1704
|1.01
|11.3
|-
|4/20/2017
|inP#1705
|0.88
|10.2
|-
|5/4/2017
|InP#1706
|0.84
|11
|-
|5/19/2017
|InP#1707
|0.82
|9.9
|-
|7/6/2017
|InP#1708
|0.98
|12.1
|-
|8/16/2017
|InP#1709
|0.76
|8
|-
|8/28/2017
|InP#1710
|1
|11.7
|-
|10/11/2017
|InP#1711
|1
|11
|-
|10/23/2017
|InP#1712
|1.11
|13.1
|-
|11/21/2017
|InP#1713
|1.04
|12.1
|-
|12/7/2017
|InP#1714
|0.96
|10.4
|-
|1/2/2018
|InP#1801
|1.44
|14.3
|-
|3/1/2018
|InP#1802
|0.96
|9
|-
|4/5/2018
|InP#1803
|1.05
|11.9
|-
|4/10/2018
|InP#1804
|1.12
|12.8
|-
|-
|4/26/2018
|4/26/2018

Revision as of 18:05, 2 May 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (mm/min) Selectivity (InP/SiO2)
10/4/2016 InP#1613 0.92 8.9
12/1/2016 InP#1614 0.96 12.1
12/15/2016 InP#1615 0.91 9.3
1/23/2017 InP#1701 0.93 9.4
2/7/2017 InP#1702 0.75 7.7
2/21/2017 InP#1703 0.91 11.3
3/21/2017 InP#1704 1.01 11.3
4/20/2017 inP#1705 0.88 10.2
5/4/2017 InP#1706 0.84 11
5/19/2017 InP#1707 0.82 9.9
7/6/2017 InP#1708 0.98 12.1
8/16/2017 InP#1709 0.76 8
8/28/2017 InP#1710 1 11.7
10/11/2017 InP#1711 1 11
10/23/2017 InP#1712 1.11 13.1
11/21/2017 InP#1713 1.04 12.1
12/7/2017 InP#1714 0.96 10.4
1/2/2018 InP#1801 1.44 14.3
3/1/2018 InP#1802 0.96 9
4/5/2018 InP#1803 1.05 11.9
4/10/2018 InP#1804 1.12 12.8
4/26/2018 InP#1805 1.29 13.6

https://www.nanotech.ucsb.edu/wiki/images/a/ab/IP180506.jpg