Atomic Layer Deposition Recipes: Difference between revisions
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==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)== |
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)== |
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*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}} |
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*{{fl|ALD-Al2O3-300-Saturated-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300 Saturated}} |
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*{{fl|ALD-Al2O3-Plasma-300C-Recipe.pdf|Al{{sub|2}}O{{sub|3}} plasma 300C}} |
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*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}} |
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==AlN deposition (ALD CHAMBER 3)== |
==AlN deposition (ALD CHAMBER 3)== |
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*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d. |
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*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}} |
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*recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
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==HfO{{sub|2}} deposition (ALD CHAMBER 3)== |
==HfO{{sub|2}} deposition (ALD CHAMBER 3)== |
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*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc |
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*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}} |
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*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
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*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}} |
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==Pt deposition (ALD CHAMBER 1)== |
==Pt deposition (ALD CHAMBER 1)== |
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(Platinum) |
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*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc |
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc |
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*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt% |
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt% |
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== Ru deposition (ALD CHAMBER 1) == |
== Ru deposition (ALD CHAMBER 1) == |
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* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc. |
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(Ruthenium) |
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* Conductivity data: (to be added soon) |
* Conductivity data: (to be added soon) |
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==SiO{{sub|2}} deposition (ALD CHAMBER 3)== |
==SiO{{sub|2}} deposition (ALD CHAMBER 3)== |
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*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc |
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*{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}} |
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*recipe utilizes an O* plasma @ 250W, 5mTorr pressure |
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*{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}} |
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==ZnO deposition (ALD CHAMBER 1)== |
==ZnO deposition (ALD CHAMBER 1)== |
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*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc |
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc |
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*resistivity ~ 4200uOhm.cm (390A film) |
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==ZrO{{sub|2}} deposition (ALD CHAMBER 3)== |
==ZrO{{sub|2}} deposition (ALD CHAMBER 3)== |
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*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc |
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*{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}} |
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*not directly characterized since results are basically the same as the HfO2 process above. |
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*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place. |
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==TiO{{sub|2}} deposition (ALD CHAMBER 3)== |
==TiO{{sub|2}} deposition (ALD CHAMBER 3)== |
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Revision as of 18:48, 14 May 2018
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Al2O3 deposition (ALD CHAMBER 3)
- Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
AlN deposition (ALD CHAMBER 3)
- Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
- recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
HfO2 deposition (ALD CHAMBER 3)
- Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
Pt deposition (ALD CHAMBER 1)
- Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
- recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
- Conductivity data: (to be added soon)
Ru deposition (ALD CHAMBER 1)
- Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added soon)
SiO2 deposition (ALD CHAMBER 3)
- Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
- recipe utilizes an O* plasma @ 250W, 5mTorr pressure
ZnO deposition (ALD CHAMBER 1)
- Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
ZrO2 deposition (ALD CHAMBER 3)
- Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
- not directly characterized since results are basically the same as the HfO2 process above.
- as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
TiO2 deposition (ALD CHAMBER 3)
- Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
TiN deposition (ALD CHAMBER 3)
- Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added soon)