Test Data of etching SiO2 with CHF3/CF4/O2: Difference between revisions
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| colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
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|Date |
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|Sample# |
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|Etch Rate (nm/min) |
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|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
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|10/5/2018 |
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|SiO2#01 |
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|95.2 |
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|0.74 |
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|77.9 |
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[[:File:SiO2 Etch using ICP2 with O2.pdf]] |
[[:File:SiO2 Etch using ICP2 with O2.pdf]] |
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Latest revision as of 23:17, 8 October 2018
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#01 | 95.2 | 0.74 | 77.9 |