Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
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[[:File:SiO2 Etch using ICP2-no O2.pdf]] |
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Revision as of 15:30, 9 October 2018
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 |