InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

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[[:File:IP180805.pdf|https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180909.pdf]]
[[:File:IP180909.pdf|https://www.nanotech.ucsb.edu/wiki/index.php/File:IP180909.pdf]]

Revision as of 19:06, 11 December 2018

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rate (um/min) Selectivity (InP/SiO2)
10/4/2016 InP#1613 0.92 8.9
12/1/2016 InP#1614 0.96 12.1
12/15/2016 InP#1615 0.91 9.3
1/23/2017 InP#1701 0.93 9.4
2/7/2017 InP#1702 0.75 7.7
2/21/2017 InP#1703 0.91 11.3
3/21/2017 InP#1704 1.01 11.3
4/20/2017 inP#1705 0.88 10.2
5/4/2017 InP#1706 0.84 11
5/19/2017 InP#1707 0.82 9.9
7/6/2017 InP#1708 0.98 12.1
8/16/2017 InP#1709 0.76 8
8/28/2017 InP#1710 1 11.7
10/11/2017 InP#1711 1 11
10/23/2017 InP#1712 1.11 13.1
11/21/2017 InP#1713 1.04 12.1
12/7/2017 InP#1714 0.96 10.4
1/2/2018 InP#1801 1.44 14.3
3/1/2018 InP#1802 0.96 9
4/5/2018 InP#1803 1.05 11.9
4/10/2018 InP#1804 1.12 12.8
4/26/2018 InP#1805 1.29 13.6
5/22/2018 InP#1806 0.88 8.4
8/7/2018 InP#1807 0.81 8.0
10/3/2018 InP#1808 1.01 13.7
12/10/2018 InP#1809 1.01 11.4

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