E-Beam 1 (Sharon): Difference between revisions

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|manufacturer = Sharon Vacuum Co., Inc.
|manufacturer = Sharon Vacuum Co., Inc.
|materials =
|materials =
}} __TOC__
}}

__TOC__
= About =
= About =


The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, SiO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective and highly reflective multiple layer stacks), electrical insulators, and reactive ion etching masks. Samples up to ~ 3” x 3” can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

= Processes =

'''This section will outline the basic processes that run on the tool.'''<br>

== Process #1 ==


=Processes=
'''This section will outline the basic processes that run on the tool.'''<br>
==Process #1==
Nam in odio quis turpis interdum dignissim ac sed dui. Nunc in lorem purus, et scelerisque velit. Maecenas at eros mauris. Donec adipiscing tristique fringilla. Nullam eu quam id ipsum luctus bibendum. Morbi ac luctus justo. Integer vitae ante ac lacus consectetur iaculis. Aliquam adipiscing faucibus fringilla. Duis bibendum scelerisque nulla vel vulputate. Fusce varius molestie pharetra. Cras suscipit sodales velit, id tempor erat fringilla eget. Pellentesque sollicitudin interdum dolor et condimentum. Donec malesuada accumsan eros ut semper. Fusce sollicitudin, sapien id ullamcorper euismod, eros augue tincidunt risus, sed venenatis turpis lacus ut elit. Sed eu sollicitudin mi. Mauris eget est eu ligula vulputate congue non et leo.
Nam in odio quis turpis interdum dignissim ac sed dui. Nunc in lorem purus, et scelerisque velit. Maecenas at eros mauris. Donec adipiscing tristique fringilla. Nullam eu quam id ipsum luctus bibendum. Morbi ac luctus justo. Integer vitae ante ac lacus consectetur iaculis. Aliquam adipiscing faucibus fringilla. Duis bibendum scelerisque nulla vel vulputate. Fusce varius molestie pharetra. Cras suscipit sodales velit, id tempor erat fringilla eget. Pellentesque sollicitudin interdum dolor et condimentum. Donec malesuada accumsan eros ut semper. Fusce sollicitudin, sapien id ullamcorper euismod, eros augue tincidunt risus, sed venenatis turpis lacus ut elit. Sed eu sollicitudin mi. Mauris eget est eu ligula vulputate congue non et leo.

==Process #2==
== Process #2 ==

Proin ut turpis lorem, eu scelerisque elit. Duis ullamcorper sem quis velit mattis in molestie justo pellentesque. Maecenas semper, quam nec posuere tempus, orci nisi pellentesque nulla, eu fringilla felis massa non nisi. Integer sit amet enim et nulla accumsan aliquet. Cras vitae aliquam risus. Aenean dapibus risus sed nunc pharetra hendrerit suscipit sem interdum. Cras feugiat cursus diam, non varius odio fermentum ac. Nulla nec rutrum augue. Aliquam pellentesque orci eget libero auctor imperdiet. Vivamus scelerisque porta tincidunt. Vivamus adipiscing ultricies porttitor. Quisque viverra dolor in nisl tempor et lacinia nulla euismod.
Proin ut turpis lorem, eu scelerisque elit. Duis ullamcorper sem quis velit mattis in molestie justo pellentesque. Maecenas semper, quam nec posuere tempus, orci nisi pellentesque nulla, eu fringilla felis massa non nisi. Integer sit amet enim et nulla accumsan aliquet. Cras vitae aliquam risus. Aenean dapibus risus sed nunc pharetra hendrerit suscipit sem interdum. Cras feugiat cursus diam, non varius odio fermentum ac. Nulla nec rutrum augue. Aliquam pellentesque orci eget libero auctor imperdiet. Vivamus scelerisque porta tincidunt. Vivamus adipiscing ultricies porttitor. Quisque viverra dolor in nisl tempor et lacinia nulla euismod.


=Materials Table=
= Materials Table =

{| class="wikitable" style="font-size: 95%;" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%"
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="wikitable"
|-bgcolor=#D0E7FF
!align=center bgcolor=#D0E7FF width="75"|'''Material'''
|- bgcolor="#D0E7FF"
!align=center bgcolor=#D0E7FF width="75"|'''Position'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Material'''
!align=center bgcolor=#D0E7FF width="75"|'''Hearth / Crucible'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Position'''
!align=center bgcolor=#D0E7FF width="85"|'''Film Number'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Hearth / Crucible'''
!align=center bgcolor=#D0E7FF width="75"|'''Density'''
! width="85" bgcolor="#D0E7FF" align="center" | '''Film Number'''
!align=center bgcolor=#D0E7FF width="75"|'''Z Ratio'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Density'''
!align=center bgcolor=#D0E7FF width="75"|'''Tooling'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
!align=center bgcolor=#D0E7FF width="500"|'''Comments'''
! width="75" bgcolor="#D0E7FF" align="center" | '''Tooling'''
! width="500" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|-
| Ag
|Ag||4||C||5||10.5||0.524||140||
| 4
| C
| 5
| 10.5
| 0.524
| 140
|
|-
|-
| Al
| Al||2||C||6||2.7||1.080||118||
| 2
| C
| 6
| 2.7
| 1.080
| 118
|
|-
|-
| Al<sub>2</sub>O<sub>3</sub>||1||C||6||3.97||0.50||169||
| Al<sub>2</sub>O<sub>3</sub>
| 1
| C
| 6
| 3.97
| 0.50
| 169
|
|-
|-
| Au
| Au||4||C||4||19.3||0.381||138||Bazookas can be used at 20-30Å/sec.
| 4
| C
| 4
| 19.3
| 0.381
| 138
| Bazookas can be used at 20-30Å/sec.
|-
|-
| AuGe
| AuGe||3||C||5||17.63||0.397||151||Composition unpredictable unless you practically empty the crucible.
| 3
| C
| 5
| 17.63
| 0.397
| 151
| Composition unpredictable unless you practically empty the crucible.
|-
|-
| Cr
| Cr||3||H||6||7.2||0.305||140||Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
| 3
| H
| 6
| 7.2
| 0.305
| 140
| Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
|-
|-
| Fe
| Fe||||||||7.86||0.349||||
|
|
|
| 7.86
| 0.349
|
|
|-
|-
| Ge
| Ge||3||C||6||5.35||0.516||130||
| 3
| C
| 6
| 5.35
| 0.516
| 130
|
|-
|-
| MgO||1||||6||||||||
| MgO
| 1
|
| 6
|
|
|
|
|-
|-
| Mo
| Mo||||||||10.2||0.257||||
|
|
|
| 10.2
| 0.257
|
|
|-
|-
| Ni
| Ni||1||H||1||8.91||0.331||140||Prone to spitting. Cool down for 15 minutes before venting.
| 1
| H
| 1
| 8.91
| 0.331
| 140
| Prone to spitting. Cool down for 15 minutes before venting.
|-
|-
| NiCr
| NiCr||1||H||6||8.23||0.321||||
| 1
| H
| 6
| 8.23
| 0.321
|
|
|-
|-
| Nb
| Nb||4||C||6||8.57||0.516||||Cool down for at least 35 minutes before venting.
| 4
| C
| 6
| 8.57
| 0.516
|
| Cool down for at least 35 minutes before venting.
|-
|-
| Pd
| Pd||1||H||9||12.0||0.357||140||
| 1
| H
| 9
| 12.0
| 0.357
| 140
|
|-
|-
| Pt
| Pt||1||C||8||21.40||0.245||140||Prone to spitting. Evaporate at 1.5Å/sec or less.
| 1
| C
| 8
| 21.40
| 0.245
| 140
| Prone to spitting. Evaporate at 1.5Å/sec or less.
|-
|-
| Si
| Si||2||H||2||2.32||0.712||150||Cool down very slowly after evaporating lest you crack the source.
| 2
| H
| 2
| 2.32
| 0.712
| 150
| Cool down very slowly after evaporating lest you crack the source.
|-
|-
| SiO
| SiO||||C||6||2.13||0.87||132||
|
| C
| 6
| 2.13
| 0.87
| 132
|
|-
|-
| SiO<sub>2</sub>
| SiO<sub>2</sub>||1||C||6||2.2||1.07||140||Please change the crystal and the upper mirror after evaporating oxide.
| 1
| C
| 6
| 2.2
| 1.07
| 140
| Please change the crystal and the upper mirror after evaporating oxide.
|-
|-
| SrF
| SrF||1||C||6||4.28||0.727||140||
| 1
| C
| 6
| 4.28
| 0.727
| 140
|
|-
|-
| Ta
| Ta||1||H||6||16.6||0.262||||Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
| 1
| H
| 6
| 16.6
| 0.262
|
| Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
|-
|-
| W
| W||1||C||6||19.3||0.163||138||
| 1
| C
| 6
| 19.3
| 0.163
| 138
|
|-
|-
| Ti
| Ti||3||H||3||4.50||0.628||139||
| 3
| H
| 3
| 4.50
| 0.628
| 139
|
|}
|}


=Detailed Specifications=
= Detailed Specifications =

'''Details about the tool'''
'''Details about the tool'''
* Cryopump: CTI Cryotorr 8F with air-cooled compressor

* Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
*Cryopump: CTI Cryotorr 8F with air-cooled compressor
* Mechanical Pump: Varian, Model SD700, 35 CFM
*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
* Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
*Mechanical Pump: Varian, Model SD700, 35 CFM
* Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
* Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
* Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV

= See Also =

'''Links to documents pertaining to the tool...'''

*[http://www.google.com Article about E-beam Deposition...]
*[http://www.google.com Research from other university...]
*etc.

= Documentation =


*[[Media:ID_2501_Ion-Beam_Drive_-_User_Manual.pdf|ID 2501 Ion-Beam Drive - User Manual]]
=See Also=
*[[Media:Operating_Ebeam1.pdf|EBeam 1 Operating Instructions]]
'''Links to documents pertaining to the tool...'''
* [http://www.google.com Article about E-beam Deposition...]
* [http://www.google.com Research from other university...]
* etc.


[[Category:Vacuum_Deposition]]
=Documentation=
*[[media:ID 2501 Ion-Beam Drive - User Manual.pdf|ID 2501 Ion-Beam Drive - User Manual]]
*[[media:Operating Ebeam1.pdf|EBeam 1 Operating Instructions]]
[[category:Vacuum Deposition]]

Revision as of 22:37, 27 June 2012

E-Beam 1 (Sharon)
E-beam1.jpg
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Four Pocket Electron Beam Evaporator
Manufacturer Sharon Vacuum Co., Inc.
Vacuum Deposition Recipes


About

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

Processes

This section will outline the basic processes that run on the tool.

Process #1

Nam in odio quis turpis interdum dignissim ac sed dui. Nunc in lorem purus, et scelerisque velit. Maecenas at eros mauris. Donec adipiscing tristique fringilla. Nullam eu quam id ipsum luctus bibendum. Morbi ac luctus justo. Integer vitae ante ac lacus consectetur iaculis. Aliquam adipiscing faucibus fringilla. Duis bibendum scelerisque nulla vel vulputate. Fusce varius molestie pharetra. Cras suscipit sodales velit, id tempor erat fringilla eget. Pellentesque sollicitudin interdum dolor et condimentum. Donec malesuada accumsan eros ut semper. Fusce sollicitudin, sapien id ullamcorper euismod, eros augue tincidunt risus, sed venenatis turpis lacus ut elit. Sed eu sollicitudin mi. Mauris eget est eu ligula vulputate congue non et leo.

Process #2

Proin ut turpis lorem, eu scelerisque elit. Duis ullamcorper sem quis velit mattis in molestie justo pellentesque. Maecenas semper, quam nec posuere tempus, orci nisi pellentesque nulla, eu fringilla felis massa non nisi. Integer sit amet enim et nulla accumsan aliquet. Cras vitae aliquam risus. Aenean dapibus risus sed nunc pharetra hendrerit suscipit sem interdum. Cras feugiat cursus diam, non varius odio fermentum ac. Nulla nec rutrum augue. Aliquam pellentesque orci eget libero auctor imperdiet. Vivamus scelerisque porta tincidunt. Vivamus adipiscing ultricies porttitor. Quisque viverra dolor in nisl tempor et lacinia nulla euismod.

Materials Table

Material Position Hearth / Crucible Film Number Density Z Ratio Tooling Comments
Ag 4 C 5 10.5 0.524 140
Al 2 C 6 2.7 1.080 118
Al2O3 1 C 6 3.97 0.50 169
Au 4 C 4 19.3 0.381 138 Bazookas can be used at 20-30Å/sec.
AuGe 3 C 5 17.63 0.397 151 Composition unpredictable unless you practically empty the crucible.
Cr 3 H 6 7.2 0.305 140 Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
Fe 7.86 0.349
Ge 3 C 6 5.35 0.516 130
MgO 1 6
Mo 10.2 0.257
Ni 1 H 1 8.91 0.331 140 Prone to spitting. Cool down for 15 minutes before venting.
NiCr 1 H 6 8.23 0.321
Nb 4 C 6 8.57 0.516 Cool down for at least 35 minutes before venting.
Pd 1 H 9 12.0 0.357 140
Pt 1 C 8 21.40 0.245 140 Prone to spitting. Evaporate at 1.5Å/sec or less.
Si 2 H 2 2.32 0.712 150 Cool down very slowly after evaporating lest you crack the source.
SiO C 6 2.13 0.87 132
SiO2 1 C 6 2.2 1.07 140 Please change the crystal and the upper mirror after evaporating oxide.
SrF 1 C 6 4.28 0.727 140
Ta 1 H 6 16.6 0.262 Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
W 1 C 6 19.3 0.163 138
Ti 3 H 3 4.50 0.628 139

Detailed Specifications

Details about the tool

  • Cryopump: CTI Cryotorr 8F with air-cooled compressor
  • Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
  • Mechanical Pump: Varian, Model SD700, 35 CFM
  • Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
  • Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
  • Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
  • Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV

See Also

Links to documents pertaining to the tool...

Documentation

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