Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add a SEM pic)
(add a data)
Line 23: Line 23:
|
|
|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|-
|3/6/19
|I21904
|151
|1.23
|85.6
|
|}
|}

Revision as of 22:04, 8 March 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/19 I21904 151 1.23 85.6
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&oldid=156068"