Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
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Revision as of 23:13, 20 March 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [1] |
| 1/28/2019 | I21901 | 146 | 1.23 | [2] | |
| 3/6/2019 | I21904 | 151 | 1.23 | 85.6 | https://www.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf |