Test Data of etching SiO2 with CHF3/CF4: Difference between revisions
Jump to navigation
Jump to search
(add data) |
(add a pic) |
||
| Line 36: | Line 36: | ||
|1.37 |
|1.37 |
||
| |
| |
||
|[https://www.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf] |
|||
| |
|||
|} |
|} |
||
Revision as of 23:08, 19 July 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [1] |
| 1/28/2019 | I21901 | 146 | 1.23 | [2] | |
| 3/6/2019 | I21904 | 151 | 1.23 | 85.6 | https://www.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf |
| 7/18/2019 | I21905 | 162 | 1.37 | [3] | |