Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine ICP Etcher"
Jump to navigation
Jump to search
Line 14: | Line 14: | ||
|0.99 |
|0.99 |
||
| |
| |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
||
− | | |
||
|} |
|} |
Latest revision as of 18:37, 2 February 2021
Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [1] |