InP Etch Rate and Selectivity (InP/SiO2): Difference between revisions

Revision as of 01:33, 4 February 2021

1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date	Sample#	InP Etch Rate (um/min)	Selectivity (InP/SiO2)	Profile SEM Picture
10/4/2016	InP#1613	0.92	8.9	[1]
12/1/2016	InP#1614	0.96	12.1	[2]
12/15/2016	InP#1615	0.91	9.3	[3]
1/23/2017	InP#1701	0.93	9.4	[4]
2/7/2017	InP#1702	0.75	7.7	[5]
2/21/2017	InP#1703	0.91	11.3	[6]
3/21/2017	InP#1704	1.01	11.3	[7]
4/20/2017	inP#1705	0.88	10.2	[8]
5/4/2017	InP#1706	0.84	11	[9]
5/19/2017	InP#1707	0.82	9.9	[10]
7/6/2017	InP#1708	0.98	12.1	[11]
8/16/2017	InP#1709	0.76	8	[12]
8/28/2017	InP#1710	1	11.7	[13]
10/11/2017	InP#1711	1	11	[14]
10/23/2017	InP#1712	1.11	13.1	[15]
11/21/2017	InP#1713	1.04	12.1	[16]
12/7/2017	InP#1714	0.96	10.4	[17]
1/2/2018	InP#1801	1.44	14.3	[18]
3/1/2018	InP#1802	0.96	9	[19]
4/5/2018	InP#1803	1.05	11.9	[20]
4/10/2018	InP#1804	1.12	12.8	[21]
4/26/2018	InP#1805	1.29	13.6	[22]
5/22/2018	InP#1806	0.88	8.4	[23]
8/7/2018	InP#1807	0.81	8.0	[24]
10/3/2018	InP#1808	1.01	13.7	[25]
12/10/2018	InP#1809	1.01	11.4	[26]
1/31/2019	InP#1901	0.88	9.7	[27][28]
8/30/2020	InP#2001	1.11	10.4	[29]
2/3/2021	InP#2101	1.30	16	[30][31]

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-|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf]
+|[https://wiki.nanotech.ucsb.edu/w/images/4/47/IP210117.pdf][https://wiki.nanotech.ucsb.edu/w/images/d/d4/IP210119.pdf]
 |}