PECVD Recipes: Difference between revisions

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*[[Media:ICP-PECVD-a-Si-Recipe-90C.pdf|a-Si Deposition Recipe - 90°]]
*[[Media:ICP-PECVD-a-Si-Recipe-90C.pdf|a-Si Deposition Recipe - 90°]]
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*[[Media:ICP-PECVD-a-Si-Recipe-250C-a.pdf|a-Si Deposition Recipe - 250°]]
*[[Media:ICP-PECVD-a-Si-Recipe-250C.pdf|a-Si Deposition Recipe - 250°]]


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Revision as of 22:32, 4 September 2013

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°