PECVD Recipes: Difference between revisions
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*[[media:PECVD2-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
*[[media:PECVD2-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
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*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
*[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
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== Amorphous-Si deposition (PECVD #2) == |
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*[[media:PECVD2-SiO2-Recipe.pdf|Amorphous Si Deposition Recipe]] |
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= [[ICP-PECVD (Unaxis VLR)]] = |
= [[ICP-PECVD (Unaxis VLR)]] = |
Revision as of 22:12, 11 September 2013
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Deposition Recipe
- SIN data
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
---|---|