Wet Etching Recipes: Difference between revisions
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=Compound Semiconductor Etching= |
=Compound Semiconductor Etching= |
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[http://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&cad=rja&ved=0CC4QFjAA&url=http%3A%2F%2Fwww.nanofab.ubc.ca%2Ffiles%2Fclawson2001_iii-v_etching.pdf&ei=pIp6UobsOOTjiAKIw4G4Cw&usg=AFQjCNHo1MN8BZJmexnKIwpn92Rax6N5Lg&sig2=RK4rXPfIeJgcQEH5HkqWWw&bvm=bv.56146854,d.cGE Guide to references on III±V semiconductor chemical etching] Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks, |
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=Metal Etching= |
=Metal Etching= |
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Revision as of 18:31, 6 November 2013
Example Wet Etching Table (Include All Materials)
How to use the wet etch table:
When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.
This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
The Master Table of Wet Etching (Include All Materials)
| Material | Etchant | Rate (nm/min) | Anisotropy | Selective to | Selectivity | Ref. | Notes | Confirmed by | Extra column |
|---|---|---|---|---|---|---|---|---|---|
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
| InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | [Lamponi (p.102)] | Example | Jon Doe | Example |
Compound Semiconductor Etching
Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,