PECVD 2 (Advanced Vacuum): Difference between revisions
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= About = |
= About = |
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This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample.The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings.Current available targets are Ta and Si, with Al and Ti to be added soon.The system is load locked and can handle wafers up to 6” in diameter as well as small pieces. Sample rotation and angling is used to facilitate material quality and allows for sidewall coverage on non-planar surfaces. Uniformity is better than 2% over 4" wafers and reproducibility is expected to be within one percent. |
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This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. |
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=See Also= |
=See Also= |
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Revision as of 03:42, 1 July 2012
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About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.