E-Beam 1 (Sharon)

E-Beam 1 (Sharon) Tool Type Vacuum Deposition Location Bay 3 Supervisor Brian Lingg Supervisor Phone (805) 893-8145 Supervisor E-Mail lingg_b@ucsb.edu Description Four Pocket Electron Beam Evaporator Manufacturer Sharon Vacuum Co., Inc. Vacuum Deposition Recipes

About

This section will discuss the basics about the tool.

The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.

Processes

This section will outline the basic processes that run on the tool.

Process #1

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Process #2

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Materials Table

Material	Position	Hearth / Crucible	Film Number	Density	Z Ratio	Tooling	Comments
Ag	4	C	5	10.5	0.524	140
Al	2	C	6	2.7	1.080	118
Al2O3	1	C	6	3.97	0.50	169
Au	4	C	4	19.3	0.381	138	Bazookas can be used at 20-30Å/sec.
AuGe	3	C	5	17.63	0.397	151	Composition unpredictable unless you practically empty the crucible.
Cr	3	H	6	7.2	0.305	140	Do not evaporate more than 200Å of Cr in the E-Beam evaporator.
Fe				7.86	0.349
Ge	3	C	6	5.35	0.516	130
MgO	1		6
Mo				10.2	0.257
Ni	1	H	1	8.91	0.331	140	Prone to spitting. Cool down for 15 minutes before venting.
NiCr	1	H	6	8.23	0.321
Nb	4	C	6	8.57	0.516		Cool down for at least 35 minutes before venting.
Pd	1	H	9	12.0	0.357	140
Pt	1	C	8	21.40	0.245	140	Prone to spitting. Evaporate at 1.5Å/sec or less.
Si	2	H	2	2.32	0.712	150	Cool down very slowly after evaporating lest you crack the source.
SiO		C	6	2.13	0.87	132
SiO2	1	C	6	2.2	1.07	140	Please change the crystal and the upper mirror after evaporating oxide.
SrF	1	C	6	4.28	0.727	140
Ta	1	H	6	16.6	0.262		Requires extremely high current. Minimum 35 minute cool down. Hearth #3 may be used. Call me before you try Ta.
W	1	C	6	19.3	0.163	138
Ti	3	H	3	4.50	0.628	139

Detailed Specifications

Details about the tool

• Cryopump: CTI Cryotorr 8F with air-cooled compressor
• Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
• Mechanical Pump: Varian, Model SD700, 35 CFM
• Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
• Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
• Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
• Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV

See Also

Links to documents pertaining to the tool...

• Article about E-beam Deposition...
• Research from other university...
• etc.

Documentation

• ID 2501 Ion-Beam Drive - User Manual
• EBeam 1 Operating Instructions