ICP Etch 1 (Panasonic E646V)

ICP Etch 1 (Panasonic E646V) Tool Type Dry Etch Location Bay 2 Supervisor Don Freeborn Supervisor Phone (805) 893-7975 Supervisor E-Mail dfreeborn@ece.ucsb.edu Description ? Manufacturer Panasonic Factory Solutions, Japan Dry Etch Recipes Sign up for this tool

About

This is a mu-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, He, and O₂ for gas sources and can be used to etch a variety of materials from SiO₂ to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system accepts 6” wafers (JEIDA Std) or pieces mounted to the wafers.

Detailed Specifications

• 1250 W ICP source, 600 W RF Sample Bias Source in etching chamber
• RT - 80°C sample temperature for etching
• Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
• Cl₂, BCl₃, CF₄, CHF₃, SF₆, Ar, N₂, He, and O₂ in etch chamber
• Pieces possible by mounting to 6” wafer
• Load-Locked
• Up to 20 steps per recipe
• Laser monitor with 679.60nm wavelength

Documentation

• Gas Change Procedure (CHF3 & AR)
• Gas Change Procedure (CF4 & SF6)
• Panasonic _1_instructions.pdf
• Gas Change Procedure (N2 & He)