InP Etch Rate and Selectivity (InP/SiO2)
Jump to navigation
Jump to search
| 1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes. | |||
| Date | Sample# | InP Etch Rate (mm/min) | Selectivity (InP/SiO2) |
| 10/4/2016 | InP#1613 | 0.92 | 8.9 |
| 12/1/2016 | InP#1614 | 0.96 | 12.1 |
| 12/15/2016 | InP#1615 | 0.91 | 9.3 |
| 1/23/2017 | InP#1701 | 0.93 | 9.4 |
| 2/7/2017 | InP#1702 | 0.75 | 7.7 |
| 2/21/2017 | InP#1703 | 0.91 | 11.3 |
| 3/21/2017 | InP#1704 | 1.01 | 11.3 |
| 4/20/2017 | inP#1705 | 0.88 | 10.2 |
| 5/4/2017 | InP#1706 | 0.84 | 11 |
| 5/19/2017 | InP#1707 | 0.82 | 9.9 |
| 7/6/2017 | InP#1708 | 0.98 | 12.1 |
| 8/16/2017 | InP#1709 | 0.76 | 8 |
| 8/28/2017 | InP#1710 | 1 | 11.7 |
| 10/11/2017 | InP#1711 | 1 | 11 |
| 10/23/2017 | InP#1712 | 1.11 | 13.1 |
| 11/21/2017 | InP#1713 | 1.04 | 12.1 |
| 12/7/2017 | InP#1714 | 0.96 | 10.4 |
| 1/2/2018 | InP#1801 | 1.44 | 14.3 |
| 3/1/2018 | InP#1802 | 0.96 | 9 |
| 4/5/2018 | InP#1803 | 1.05 | 11.9 |
| 4/10/2018 | InP#1804 | 1.12 | 12.8 |
| 4/26/2018 | InP#1805 | 1.29 | 13.6 |
