| 1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
|
| Date
|
Sample#
|
InP Etch Rate (um/min)
|
Selectivity (InP/SiO2)
|
| 10/4/2016
|
InP#1613
|
0.92
|
8.9
|
| 12/1/2016
|
InP#1614
|
0.96
|
12.1
|
| 12/15/2016
|
InP#1615
|
0.91
|
9.3
|
| 1/23/2017
|
InP#1701
|
0.93
|
9.4
|
| 2/7/2017
|
InP#1702
|
0.75
|
7.7
|
| 2/21/2017
|
InP#1703
|
0.91
|
11.3
|
| 3/21/2017
|
InP#1704
|
1.01
|
11.3
|
| 4/20/2017
|
inP#1705
|
0.88
|
10.2
|
| 5/4/2017
|
InP#1706
|
0.84
|
11
|
| 5/19/2017
|
InP#1707
|
0.82
|
9.9
|
| 7/6/2017
|
InP#1708
|
0.98
|
12.1
|
| 8/16/2017
|
InP#1709
|
0.76
|
8
|
| 8/28/2017
|
InP#1710
|
1
|
11.7
|
| 10/11/2017
|
InP#1711
|
1
|
11
|
| 10/23/2017
|
InP#1712
|
1.11
|
13.1
|
| 11/21/2017
|
InP#1713
|
1.04
|
12.1
|
| 12/7/2017
|
InP#1714
|
0.96
|
10.4
|
| 1/2/2018
|
InP#1801
|
1.44
|
14.3
|
| 3/1/2018
|
InP#1802
|
0.96
|
9
|
| 4/5/2018
|
InP#1803
|
1.05
|
11.9
|
| 4/10/2018
|
InP#1804
|
1.12
|
12.8
|
| 4/26/2018
|
InP#1805
|
1.29
|
13.6
|
| 5/22/2018
|
InP#1806
|
0.88
|
8.4
|
https://www.nanotech.ucsb.edu/wiki/images/a/ab/IP180506.jpg
