PECVD Recipes

Back to [[{{{1}}} Recipes]].

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

• SiN Deposition Recipe
• SiN Deposition Particle Thickness Data

SiO₂ deposition (PECVD #1)

• SiO₂ Deposition Recipe
• SiO₂ Deposition Particle Thickness Data

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

1. Standard clean
   1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
   2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
   3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
   4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
2. Nitride 2 (HF, n=2.0, 93nm/min)
   1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

SiO₂ deposition (PECVD #2)

1. Standard clean
   1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
   2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
   3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
   4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
2. Oxide (HF, n=1.46, 25nm/min)
   1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420