InP Etch Rate and Selectivity (InP/SiO2)
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| 1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier | ||
| Date | InP Etch Rtae (um/min) | Selectivity (InP/SiO2) |
| 4/10/2018 | 1.12 | 12.8 |