Test Data of etching SiO2 with CHF3/CF4

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ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)
10/5/2018	SiO2#02	160	1.2	82.1

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