Test Data of etching SiO2 with CHF3/CF4

From UCSB Nanofab Wiki
Revision as of 19:22, 29 January 2019 by Ningcao (talk | contribs)
Jump to navigation Jump to search
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
10/5/2018 SiO2#02 160 1.2 82.1
1/28/2019 I21901 146 1.23

[1]

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&oldid=155856"