InP Etch Rate and Selectivity (InP/SiO2)

From UCSB Nanofab Wiki
Revision as of 17:32, 2 May 2018 by Ningcao (talk | contribs)
Jump to navigation Jump to search
1.4 mT, 125/800W, Cl2/H2/Ar flow-rate=6.3/12.7/2 sccm, chuck temperature=200 C, and etch time=90s (Prior to the etch, do O2 plasma chamber clean for 15 minutes, then, chamber coating with the same recipe and a quarter dummy InP on carrier for 15 minutes.
Date  Sample# InP Etch Rtae (mm/min) Selectivity (InP/SiO2)
4/26/2018 InP#1805 1.29 13.6

https://www.nanotech.ucsb.edu/wiki/images/a/ab/IP180506.jpg

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=InP_Etch_Rate_and_Selectivity_(InP/SiO2)&oldid=155116"