Test Data of etching SiO2 with CHF3/CF4-Florine
| Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/29/2021 | FE2102 | 309 | 0.99 | ||
| Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/29/2021 | FE2102 | 309 | 0.99 | ||