SiO2 Etching Test using CF4/CHF3

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Flourine ICP: 3.8mT, 50/900W, CF4/CHF3=30/10sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Image
11/5/2021	SOFL01	136	1.2

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