Old Deposition Data - NastaziaM 2021-11-22

Back to Vacuum Deposition Recipes.

Contents

• 1 PECVD 1 (PlasmaTherm 790)
  • 1.1 Historical Particulate Data
  • 1.2 SiN deposition (PECVD #1)
    • 1.2.1 Historical Data
      • 1.2.1.1 Thin-Film Properties
      • 1.2.1.2 Uniformity Data
  • 1.3 SiO₂ deposition (PECVD #1)
    • 1.3.1 Historical Data
      • 1.3.1.1 Thin-Film Properties
      • 1.3.1.2 Thick-Film Properties
    • 1.3.2 Uniformity Data
  • 1.4 Low-Stress SiN - LS-SiN (PECVD#1)
  • 1.5 SiO_xN_y deposition (PECVD #1)
  • 1.6 Cleaning Recipes (PECVD #1)
    • 1.6.1 Standard Cleaning Recipe: "CF4/O2 Clean"
• 2 PECVD 2 (Advanced Vacuum)
  • 2.1 Historical Particulate Data
  • 2.2 SiO₂ deposition (PECVD #2)
    • 2.2.1 Standard Recipe
    • 2.2.2 Historical Data
      • 2.2.2.1 Thin-Film Properties
      • 2.2.2.2 Thin-Film Properties
      • 2.2.2.3 Uniformity Data
  • 2.3 SiN deposition (PECVD #2)
    • 2.3.1 Standard Recipe
    • 2.3.2 Historical Data
      • 2.3.2.1 Thin-Film Properties
      • 2.3.2.2 Uniformity Data
  • 2.4 Low-Stress SiN deposition (PECVD #2)
    • 2.4.1 Standard Recipe
    • 2.4.2 Historical Data
      • 2.4.2.1 Thin-Film Properties
      • 2.4.2.2 Uniformity Data
  • 2.5 Amorphous-Si deposition (PECVD #2)
  • 2.6 Cleaning Recipes (PECVD #2)
    • 2.6.1 Cleaning Procedure (PECVD#2)
    • 2.6.2 Standard Clean Recipe: "STD CF4/O2 Clean recipe"
    • 2.6.3 Clean Times (PECVD#2)
• 3 ICP-PECVD (Unaxis VLR)
  • 3.1 Historical Particulate Data
  • 3.2 Standard Recipes
  • 3.3 SiO2 LDR 250C Deposition (Unaxis VLR)
    • 3.3.1 Historical Data
      • 3.3.1.1 Thin-Film Properties
      • 3.3.1.2 Uniformity Data
  • 3.4 SiO2 HDR 250C Deposition (Unaxis VLR)
    • 3.4.1 Historical Data
      • 3.4.1.1 Thin-Film Properties
      • 3.4.1.2 Uniformity Data
  • 3.5 SiN 250C deposition (Unaxis VLR)
    • 3.5.1 Historical Data
      • 3.5.1.1 Thin-Film Properties
      • 3.5.1.2 Uniformity Data
  • 3.6 SiN LS 250C Deposition (Unaxis VLR)
    • 3.6.1 Historical Data
      • 3.6.1.1 Thin-Film Properties
      • 3.6.1.2 Uniformity Data
  • 3.7 Cleaning Recipes (Unaxis VLR Dep)

PECVD 1 (PlasmaTherm 790)

SiO₂ [PECVD 1]

Standard Recipe

SiO₂ [PECVD 1] Standard Recipe

Present Data

SiO₂ [PECVD 1] Present Data

Historical Data

SiO₂ [PECVD 1] Historical Data

Si₃N₄ [PECVD 1]

Standard Recipe

Si₃N₄ [PECVD 1] Standard Recipe

Present Data

Si₃N₄ [PECVD 1] Present Data

Historical Data

Si₃N₄ [PECVD 1] Historical Data

Low Stress Si₃N₄ [PECVD 2]

Standard Recipe

Low Stress Si₃N₄ [PECVD 1] Standard Recipe

Present Data

Low Stress Si₃N₄ [PECVD 1] Present Data

Historical Data

Low Stress Si₃N₄ [PECVD 1] Historical Data

Standard Cleaning Procedure [PECVD 1]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

1. Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
2. Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.

Standard Cleaning Recipe [CF4/O2 Clean]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

PECVD 2 (Advanced Vacuum)

SiO₂ [PECVD 2]

Standard Recipe

SiO₂ [PECVD 2] Standard Recipe

Present Data

SiO₂ [PECVD 2] Present Data

Historical Data

SiO₂ [PECVD 2] Historical Data

Si₃N₄ [PECVD 2]

Standard Recipe

Si₃N₄ [PECVD 2] Standard Recipe

Present Data

Si₃N₄ [PECVD 2] Present Data

Historical Data

Si₃N₄ [PECVD 2] Historical Data

Low Stress Si₃N₄ [PECVD 2]

Standard Recipe

Low Stress Si₃N₄ [PECVD 2] Standard Recipe

Present Data

Low Stress Si₃N₄ [PECVD 2] Present Data

Historical Data

Low Stress Si₃N₄ [PECVD 2] Historical Data

Standard Cleaning Procedure [PECVD 2]

The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:

1. (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
2. Load the recipe for cleaning "STD CF₄/O₂ Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.

Standard Clean Recipe [STD CF₄/O₂ Clean recipe]

Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.

Clean Times (PECVD#2)

Film Deposited	Cleaning Time (Dry)
SiO2	1 min. clean for every 1 min. deposition
Si3N4	1 min. clean for every 7 min of deposition
If > 29min total dep time (Season + Dep)	Wet Clean the Upper Lid/Chamber DI water then Isopropyl Alcohol on chamber wall & portholes

ICP-PECVD (Unaxis VLR)

2020-02: New recipes have been characterized for low particulate count and repeatability.  Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.

The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights.

Low Deposition Rate SiO₂ [ICP-PECVD]

Standard Recipe

Low Deposition Rate SiO₂ [ICP-PECVD] Standard Recipe

Present Data

Low Deposition Rate SiO₂ [ICP-PECVD] Present Data

Historical Data

Low Deposition Rate SiO₂ [ICP-PECVD] Historical Data

High Deposition Rate SiO₂ [ICP-PECVD]

Standard Recipe

High SiO₂ [ICP-PECVD] Standard Recipe

Present Data

High SiO₂ [ICP-PECVD] Present Data

Historical Data

High SiO₂ [ICP-PECVD] Historical Data

Si₃N₄ [ICP-PECVD]

Standard Recipe

Si₃N₄ [ICP-PECVD] Standard Recipe

Present Data

Si₃N₄ [ICP-PECVD] Present Data

Historical Data

Si₃N₄ [ICP-PECVD] Historical Data

Low Stress Si₃N₄ [ICP-PECVD]

Standard Recipe

Low Stress Si₃N₄ [ICP-PECVD] Standard Recipe

Present Data

Low Stress Si₃N₄ [ICP-PECVD] Present Data

Historical Data

Low Stress Si₃N₄ [ICP-PECVD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

• SiNx etches at 20nm/min
• SiO₂ etches at 40nm/min

Ion Beam Deposition (Veeco NEXUS)

SiO₂ [IBD]

Standard Recipe

SiO₂ [IBD] Standard Recipe

Present Data

SiO₂ [IBD] Present Data

Historical Data

SiO₂ [IBD] Historical Data

Si₃N₄ [IBD]

Standard Recipe

Si₃N₄ [IBD] Standard Recipe

Present Data

Si₃N₄ [IBD] Present Data

Historical Data

Si₃N₄ [IBD] Historical Data

Ta₂O₅ [IBD]

Standard Recipe

Ta₂O₅ [IBD] Standard Recipe

Present Data

Ta₂O₅ [IBD] Present Data

Historical Data

Ta₂O₅ [IBD] Historical Data

TiO₂ [IBD]

Standard Recipe

TiO₂ [IBD] Standard Recipe

Present Data

TiO₂ [IBD] Present Data

Historical Data

TiO₂ [IBD] Historical Data

Al₂O₃ [IBD]

Standard Recipe

Al₂O₃ [IBD] Standard Recipe

Present Data

Al₂O₃ [IBD] Present Data

Historical Data

Al₂O₃ [IBD] Historical Data

Standard Cleaning Procedure [ICP-PECVD]

You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.

• SiNx etches at 20nm/min
• SiO₂ etches at 40nm/min