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PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

Clean (30CLN_SN)
1. Initial t=10", p=2x10-2, T=250C
2. N₂ Purge t=30", p=300mT
3. evacuate, base pressure=2x10-2, t=10"
4. loop
5. gas stabilization, t=30"
6. etch chamber, t=30'
7. evacuate, t=10"
8. N₂ purge
9. evacuate
10. loop
11. SiO₂ gas stabilization
12. SiO₂ deposition( 200A coat)
13. evacuate
14. N₂ purge, t=30"
15. end
SiO₂ deposition (SiO2_10) 440.5 A/min
1. Initial t=10"
2. N₂ purge t=30"
3. evacuate, t=10"
4. loop
5. SiO₂ gas stabilization, t=30"
6. SiO₂ deposition t=8'11.2"
7. evacuate, t=10"
8. N₂ purge t=30"
9. evacuate t=10"
10. loop

Standard clean
1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
Nitride 2 (HF, n=2.0, 93nm/min)
1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

Standard clean
1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
Oxide (HF, n=1.46, 25nm/min)
1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420