Difference between revisions of "IR Aligner (SUSS MJB-3 IR)"

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*[https://www.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]

Revision as of 17:27, 6 April 2020

IR Aligner (SUSS MJB-3 IR)
Tool Type Lithography
Location Bay 6
Supervisor Lee Sawyer
Supervisor Phone (805) 893-2123
Supervisor E-Mail lee_sawyer@ucsb.edu
Description Mask Aligner - MJB 3 UV400 IR
Manufacturer Karl Suss America
Sign up for this tool


This is a high-performance contact mask aligner with backside alignment capability for opaque materials using IR. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. The aligner is configured for the near-UV window (365 and 405 nm) and both left and has the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although patterns should be well away from the maskplate edges due to the fact such plates can only be shifted ~ x mm and substrate chuck +/- 3 mm.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • 280-450 nm/200 W mercury lamp (can filter to 350 nm)
  • Additional manufacturer options (none installed on our systems):
    • DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
    • DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
    • 193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

Special Notes / Additional Comments

  • All units have 200 W mercury lamps
  • Infrared Transmission Alignment System
  • All models can be equipped for back side alignment using infrared light; this is used when a mask needs to be aligned to features on the substrate backside but exposed to light on the front or resist side
  • For processes using this tool please go to the contact lithography process page
  • This includes:
  • Modified alignment stage
  • Motor positioned IR light source under chuck
  • Special glass chuck transparent to IR but opaque to UV and visible light
  • In-line video camera/monitor for substrate backside viewing and alignment to front-side
  • (Note: The vacuum contact mode is not allowed in the ITA System)