Difference between revisions of "PECVD 2 (Advanced Vacuum)"
Jump to navigation
Jump to search
(Created page with "{{tool|{{PAGENAME}} |picture=PECVD2.jpg |type = Vacuum Deposition |super= Mike Silva |phone=(805)839-3918x219 |location=Bay 2 |email=silva@ece.ucsb.edu |description = Vision 310 …") |
(→About) |
||
| Line 11: | Line 11: | ||
}} | }} | ||
= About = | = About = | ||
| − | This | + | |
| + | This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films. | ||
=See Also= | =See Also= | ||
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] | *[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] | ||
Revision as of 20:42, 30 June 2012
| ||||||||||||||||||||
About
This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.