Difference between revisions of "PECVD Recipes"
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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== SiN deposition (PECVD #2) == |
== SiN deposition (PECVD #2) == |
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+ | *[[media:PECVD2-SiN-Recipe.pdf|SiN Deposition Recipe]] |
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+ | *[[media:PECVD2-SiN-Data.pdf|SiN Deposition Particle Thickness Data]] |
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− | #'''Standard clean''' |
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− | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
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− | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
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− | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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− | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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− | #'''Nitride 2''' (HF, n=2.0, 93nm/min) |
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− | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17 |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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+ | *[[media:PECVD2-SiO2-Recipe.pdf|SiO<sub>2</sub> Deposition Recipe]] |
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− | |||
+ | *[[media:PECVD2-SiO2-Data.pdf|SiO<sub>2</sub> Deposition Particle Thickness Data]] |
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− | #'''Standard clean''' |
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− | ##'''Pump down''': stabilization time t=15", step time(m)=0', step time(s)=30" |
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− | ##'''Pre-purge''': purge=1, stabilization time=15, step time(m)=1, step time(sec)=0 |
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− | ##'''High Pressure''': process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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− | ##'''Low pressure''': process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500 |
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− | #'''Oxide''' (HF, n=1.46, 25nm/min) |
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− | ##process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420 |
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=[[ICP-PECVD (Unaxis VLR)]]= |
=[[ICP-PECVD (Unaxis VLR)]]= |
Revision as of 12:08, 16 August 2012
Back to [[{{{1}}} Recipes]].