Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Florine ICP Etcher"
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(Created page with "{| class="wikitable" | colspan="6" |Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged...") |
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Revision as of 18:18, 2 February 2021
| Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/28/2021 | FE2102 | 309 | 0.99 | ||