Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add one more SEM pic)
(add a SEM pic)
Line 15: Line 15:
 
|1.2
 
|1.2
 
|82.1
 
|82.1
−
|[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2.pdf]
+
|[https://www.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 
|-
 
|-
 
|1/28/2019
 
|1/28/2019

Revision as of 12:06, 31 January 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&oldid=155893"