Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4-Florine"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Created page with "{| class="wikitable" | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |- |Date |Sample# |Etch Rate (nm/min) |Etch Selectivity (SiO2/PR) |Averaged...")
(No difference)

Revision as of 16:47, 2 February 2021

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
10/5/2018 SiO2#01 95.2 0.74 77.9
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4-Florine&oldid=158734"