Process Group - Process Control Data

Process Control Data are standardized processes, run by the NanoFab, allowing for day-to-day or year-by-year comparisons of a tool's performance at the process level. This is similar Statistical Process Control (SPC).

These are the same links are found on individual tool pages, in the <<tool page>> > Process Control section.

Data are collected by our Process Group Interns and reviewed by Process Group Staff.

Deposition (Process Control Data)

Process Control data for various deposition tools in the lab.

PECVD #1 (PlasmaTherm 790)

• PECVD#1: Plots of all data
• PECVD#1: SiO₂
• PECVD#1: Si₃N₄

PECVD #2 (Advanced Vacuum)

• PECVD#2: Plots of all data
• PECVD#2: SiO₂
• PECVD#2: Si₃N₄
• PECVD#2: Low-Stress Si₃N₄
  • Plots of Low-Stress Si₃N₄ Data

ICP-PECVD (Unaxis VLR Dep)

• ICP-PECVD: Plots of SiO₂ Films
• ICP-PECVD: Plots of Si₃N₄ Films
• ICP-PECVD: SiO₂ Low-Dep Rate (LDR)
• ICP-PECVD: SiO₂ High-Dep Rate (HDR)
• ICP-PECVD: Si₃N₄
• ICP-PECVD: Si₃N₄ Low-Stress

Ion Beam Sputter Deposition (Veeco Nexus)

• IBD: Plots of all data
• IBD: SiO₂
• IBD: Si₃N₄
• IBD: Ta₂O₅
• IBD: Al₂O₃
• IBD: TiO₂

Old Data (Pre 2022)

Old data in a different format can be found below:

• Old Deposition Data - 2021-12-15

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Etching (Process Control Data)

Process Control data for various dry etching tools in the lab.

PlasmaTherm SLR Fluorine Etcher

SiO2 Etching (FL-ICP Process Control)

We have found that SiO₂ etching is fairly insensitive to chamber condition.

• SiO₂ Etching with CHF3/CF4 - Etch Data
• SiO₂ Etching with CHF3/CF4 - Plots
  

  Click for Process Control Charts

OLD SiO2 Process Control Data

• SiO₂ Etching with CHF3/CF4 (FL-ICP) - No data prior to 2023-01-20

Si Etching (FL-ICP Process Control)

This Si etch is much more sensitive to chamber condition, allowing us to detect chamber contamination faster.

• Recipe: SiVertHFv2 - C₄F₈/SF₆/CF₄ etch of 100mm Silicon Wafer with ~50% open area and resist mask

• Si Etching with C₄F₈/SF₆/CF₄ - Etch Data
• Si Etching with C₄F₈/SF₆/CF₄ - Plots
  

  Click for Process Control Charts

Panasonic ICP #1

• SiO₂ Etch with CHF₃/CF₄ - Etch Data
• SiO₂ Etch with CHF₃/CF₄ - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO₂ Etch with CHF₃/CF₄ (Panasonic 1) - No data prior to 2023-01-20

Panasonic ICP#2

• SiO2 Etch with CHF3/CF4 - Etch Data
• SiO2 Etch with CHF3/CF4 - Plots
  

  Click for Process Control Charts

Old Process Control Data

• SiO2 Etching with CHF3/CF4 - ICP2 - No data prior to 2023-01-20

Unaxis VLR Etch

• InP Etching with Cl2/N2 @ 200°C - Unaxis Etch

Oxford PlasmaPro Cobra Etcher

Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.

• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Etch Data Tables
• "Std InP Ridge Etch" Cl₂/CH₄/H₂/60°C - Plots
  

  Click for Process Control Charts

Old Process Control Data

• InP Ridge Etch with Cl2/CH4/H2 @ 60°C - No data prior to 2023-01-20

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Lithography (Process Control Data)

Process Control Data for Nanofab Lithography/patterning tools.

Stepper #3 (ASML DUV)

• The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
• Plots of CD Repeatability
• Data for CD Uniformity and Particulate Contamination

Example of Data Table with SEM's of 320nm features. Click for full data table.

Example SPC Chart - Measured Critical Dimension "CD" versus Date. Click for charts.