Atomic Layer Deposition Recipes: Difference between revisions

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(split into Chamber 1 & Chamber 3)
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{{recipes|Vacuum Deposition}}
{{recipes|Vacuum Deposition}}
=[[Atomic Layer Deposition (Oxford FlexAL)]]=
=[[Atomic Layer Deposition (Oxford FlexAL)]]=

⚫
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==
== Oxford FlexAL Chamber #1: Metals ==

⚫
=== Pt deposition (ALD CHAMBER 1) ===
*Ch1_TMCpPt+O3-300C
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*Pt deposition rate ~ 0.5-0.6A/cyc
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*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
⚫
*Conductivity data: (to be added soon)

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=== Ru deposition (ALD CHAMBER 1) ===
⚫
* Ch1_Ex03Ru[HPbub]+O2-300C
* Ru deposition rate ~ 0.6-0.7A/cyc.
⚫
* Conductivity data: (to be added soon)

⚫
=== ZnO:Al deposition (ALD CHAMBER 1) ===
''Al-Doped ZnO for variable resisitivity.''
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*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
*ZnO deposition rate ~ 1.7A/cyc
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*resistivity ~ 4200uOhm.cm (390A film)

== Oxford FlexAL Chamber #3: Dielectrics ==

⚫
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===


*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc


==AlN deposition (ALD CHAMBER 3)==
===AlN deposition (ALD CHAMBER 3)===
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.


==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.


==Pt deposition (ALD CHAMBER 1)==
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
⚫
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
⚫
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
⚫
*Conductivity data: (to be added soon)

⚫
== Ru deposition (ALD CHAMBER 1) ==
⚫
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
⚫
* Conductivity data: (to be added soon)

⚫
==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure


==ZnO:Al deposition (ALD CHAMBER 1)==
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
⚫
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
⚫
*resistivity ~ 4200uOhm.cm (390A film)

⚫
==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
*not directly characterized since results are basically the same as the HfO2 process above.
*not directly characterized since results are basically the same as the HfO2 process above.
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.


==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.


==TiN deposition (ALD CHAMBER 3)==
===TiN deposition (ALD CHAMBER 3)===
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
*Conductivity data: (to be added soon)
*Conductivity data: (to be added soon)

Revision as of 23:34, 17 July 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
  • Conductivity data: (to be added soon)

Ru deposition (ALD CHAMBER 1)

  • Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added soon)

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

  • Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
  • recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

SiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
  • recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
  • not directly characterized since results are basically the same as the HfO2 process above.
  • as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added soon)
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