Test Data of etching SiO2 with CHF3/CF4: Difference between revisions

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{| class="wikitable"
{| class="wikitable"
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
|
|-
|-
|Date
|Date
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|Etch Selectivity (SiO2/PR)
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (<sup>o</sup>)
|Averaged Sidewall Angle (<sup>o</sup>)
|SEM Images
|-
|-
|10/5/2018
|10/5/2018
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|1.2
|1.2
|82.1
|82.1
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|-
|1/28/2019
|1/28/2019
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|1.23
|1.23
|
|
⚫
|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
|}
|}
⚫
[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]

Revision as of 07:07, 30 January 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1
1/28/2019 I21901 146 1.23 [1]
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