Plasma Activation (EVG 810): Difference between revisions
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==About== |
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This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool. |
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool. |
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==Detailed Specifications== |
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*Gases used: O<sub>2</sub> and N<sub>2</sub> |
*Gases used: O<sub>2</sub> and N<sub>2</sub> |
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*Max power: 200W |
*Max power: 200W |
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*Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power. |
*Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power. |
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== Procedures == |
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[[Plasma Activation SOP.pdf|Plasma Activation SOP]] |
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Revision as of 21:33, 11 September 2019
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About
This a capacitively coupled Oxygen plasma activation system used exclusively for the surface activation of clean surfaces prior to wafer bonding. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.
Detailed Specifications
- Gases used: O2 and N2
- Sample size: pieces to 6” wafer
- Max power: 200W
- Recipes characterized for substrate thicknesses between 250um and 750um. Thicknesses outside of this range need to have parameters optimized to minimize reflective power.