RIE Etching Recipes: Difference between revisions
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== Photoresist and ARC (RIE 5) == |
== Photoresist and ARC (RIE 5) == |
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=== DUV42P (AR2) etching |
=== DUV42P (AR2) etching === |
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* O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
* O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec |
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* No need to pump/purge, can etch right away. |
* No need to pump/purge, can etch right away. |
Revision as of 17:02, 14 June 2021
Back to Dry Etching Recipes.
RIE 2 (MRC)
CdZnTe Etching (RIE 2)
ZnS Etching (RIE 2)
ITO Etching (RIE 2)
InP-InGaAsP-InGaAlAs Etching (RIE 2)
RIE 3 (MRC)
SiO2 Etching (RIE 3)
SiNx Etching (RIE 3)
RIE 5 (PlasmaTherm)
AlGaAs\GaAs Etching (RIE 5)
GaN Etching (RIE 5)
Photoresist and ARC (RIE 5)
DUV42P (AR2) etching
- O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
- No need to pump/purge, can etch right away.
- No helium cooling, Run in manual mode.