Process Group - Process Control Data: Difference between revisions
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(Links to all PECVD and IBD data pages) |
(→Etching: links to all etching process control pages) |
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These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
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==Deposition== |
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===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]=== |
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*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD#1: Plots of all data] |
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*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 PECVD#1: SiO<sub>2</sub>] |
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*[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 PECVD#1: Si<sub>3</sub>N<sub>4</sub>] |
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===[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|PECVD #2 (Advanced Vacuum)]]=== |
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*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data] |
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*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>] |
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*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>] |
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*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>] |
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**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data] |
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===[[PECVD Recipes#ICP-PECVD .28Unaxis VLR.29|ICP-PECVD (Unaxis VLR Dep)]]=== |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD: Plots of all data] |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 ICP-PECVD: SiO<sub>2</sub> Low-Dep Rate (LDR)] |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 ICP-PECVD: SiO<sub>2</sub> High-Dep Rate (HDR)] |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 ICP-PECVD: Si<sub>3</sub>N<sub>4</sub>] |
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*[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 ICP-PECVD: Si<sub>3</sub>N<sub>4</sub> Low-Stress] |
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===[[Sputtering Recipes#Ion Beam Deposition .28Veeco NEXUS.29|Ion Beam Sputter Deposition (Veeco Nexus)]]=== |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD: Plots of all data] |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 IBD: SiO<sub>2</sub>] |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 IBD: Si<sub>3</sub>N<sub>4</sub>] |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 IBD: Ta<sub>2</sub>O<sub>5</sub>] |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 IBD: Al<sub>2</sub>O<sub>3</sub>] |
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>] |
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== |
==Etching== |
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===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]=== |
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* [[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4-Fluorine ICP Etcher]] |
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=== [[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]] === |
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* [[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO2 Etching with CHF3/CF4 - ICP1]] |
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=== [[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]] === |
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* [[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]] |
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=== [[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]] === |
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* [[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]] |
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=== [[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]] === |
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* [[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]] |
Revision as of 00:32, 11 May 2022
These are the same links found on individual tool pages, in the Recipes > <<tool page>> > Process Control section.
Deposition
PECVD #1 (PlasmaTherm 790)
PECVD #2 (Advanced Vacuum)
ICP-PECVD (Unaxis VLR Dep)
- ICP-PECVD: Plots of all data
- ICP-PECVD: SiO2 Low-Dep Rate (LDR)
- ICP-PECVD: SiO2 High-Dep Rate (HDR)
- ICP-PECVD: Si3N4
- ICP-PECVD: Si3N4 Low-Stress