Process Group - Process Control Data: Difference between revisions
Jump to navigation
Jump to search
(→Etching: links to all etching process control pages) |
(updated heading titles to include "Process COntrol Data" for linking purposes.) |
||
Line 1: | Line 1: | ||
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
||
==Deposition== |
==Deposition (Process Control Data)== |
||
===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]=== |
===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]=== |
||
Line 34: | Line 34: | ||
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>] |
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>] |
||
==Etching== |
==Etching (Process Control Data)== |
||
===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]=== |
===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]=== |
||
* |
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4-Fluorine ICP Etcher]] |
||
=== |
===[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]=== |
||
* |
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO2 Etching with CHF3/CF4 - ICP1]] |
||
=== |
===[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]=== |
||
* |
*[[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]] |
||
=== |
===[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]=== |
||
* |
*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]] |
||
=== |
===[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]=== |
||
* |
*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]] |
Revision as of 22:53, 8 June 2022
These are the same links found on individual tool pages, in the Recipes > <<tool page>> > Process Control section.
Deposition (Process Control Data)
PECVD #1 (PlasmaTherm 790)
PECVD #2 (Advanced Vacuum)
ICP-PECVD (Unaxis VLR Dep)
- ICP-PECVD: Plots of all data
- ICP-PECVD: SiO2 Low-Dep Rate (LDR)
- ICP-PECVD: SiO2 High-Dep Rate (HDR)
- ICP-PECVD: Si3N4
- ICP-PECVD: Si3N4 Low-Stress