Process Group - Process Control Data: Difference between revisions

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(→‎Etching: links to all etching process control pages)
(updated heading titles to include "Process COntrol Data" for linking purposes.)
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These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section.


==Deposition==
==Deposition (Process Control Data)==


===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]===
===[[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|PECVD #1 (PlasmaTherm 790)]]===
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*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>]
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 IBD: TiO<sub>2</sub>]


==Etching==
==Etching (Process Control Data)==
===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]===
===[[ICP Etching Recipes#Process Control Data .28Fluorine ICP Etcher.29|PlasmaTherm SLR Fluorine Etcher]]===


* [[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4-Fluorine ICP Etcher]]
*[[Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher|SiO<sub>2</sub> Etching with CHF3/CF4-Fluorine ICP Etcher]]


=== [[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]] ===
===[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Panasonic ICP #1]]===


* [[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO2 Etching with CHF3/CF4 - ICP1]]
*[[Test Data of etching SiO2 with CHF3/CF4-ICP1|SiO2 Etching with CHF3/CF4 - ICP1]]


=== [[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]] ===
===[[ICP Etching Recipes#Process Control Data .28Panasonic 2.29|Panasonic ICP#2]]===


* [[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]]
*[[Test Data of etching SiO2 with CHF3/CF4|SiO2 Etching with CHF3/CF4 - ICP2]]


=== [[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]] ===
===[[ICP Etching Recipes#Process Control Data .28Unaxis VLR.29|Unaxis VLR Etch]]===


* [[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]]
*[[Unaxis VLR Etch - Process Control Data|InP Etching with Cl2/N2 @ 200°C - Unaxis Etch]]


=== [[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]] ===
===[[ICP Etching Recipes#Process Control Data .28Oxford ICP Etcher.29|Oxford PlasmaPro Cobra Etcher]]===


* [[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]]
*[[Oxford ICP Etcher - Process Control Data|InP Ridge Etch with Cl2/CH4/H2 @ 60°C]]

Revision as of 22:53, 8 June 2022