Maskless Aligner (Heidelberg MLA150)

Maskless Aligner (Heidelberg MLA150) Location Bay 6 Tool Type Lithography Manufacturer Heidelberg Instruments Model MLA150 Description Direct-Write (Maskless) I-Line Photolithography Primary Supervisor Biljana Stamenic (805) 893-4002 biljana@ece.ucsb.edu Secondary Supervisor Lee Sawyer Materials I-Line Photoresists Recipes SignupMonkey: Sign up for this tool

About

The MLA150 allows for arbitrary direct-write patterning of I-Line photoresists from an uploaded CAD drawing/file (GDS, DXF, CIF etc.). The system uses a digital micromirror device ("DMD", an array of MEMS mirrors) for patterning the exposure light-field, to programmatically expose digitized patterns directly onto the sample - no glass photomasks/reticles are required.

Depending on the exposure options and write area, the MLA is able to expose a 100mm wafer in about 30min, and achieves minimum features sizes around 0.5µm, with overlay/alignment accuracy better than 200nm.

The system has a continuous, automatic autofocus, using pneumatic and optical detection. This potentially enables lithography on non-planar or curved substrates.

The software allows for custom drawings and aligment marks to be exposed onto any feature located on the microscope.

Greyscale lithography allows for photoresist profiles with repeatable slanted or tapered structures, via an 8-bit greyscale bitmap or layer-structured DXF file.

The high-aspect ratio (variable/long focal length) option enables vertical sidewalls on very thick (~100µm) photoresists.

Exposure method using a spatial light modulator, continuously moving stage and continuous autofocus. See HIMT for more info.

Detailed Specifications

• Maximum Writeable Area: 150 x 150mm
• Substrate size: 9-inch square or 200mm round down to 5-mm pieces
  • Contact staff for pieces < 5 mm.
• Wafer / substrate thickness: Max. 9mm / Min. 0.1mm
• Exposure optics:
  • Digital micromirror device (DMD)
  • Laser #1: 375nm
  • Laser #2: 405nm
  • Lens NA = 0.95
• Alignment Accuracy: Global ≤ 500nm; Local ("Field") ≤ 250nm
• Linewidth variation: ≤100nm (relevant to stitched exposure fields)
• Minimum Features: ~0.40µm line/space demonstrated with 0.5µm-thick PR. Requires additional effort. ≥1µm is relatively straightforward.
• Write Grid (Address Unit):
  • High Quality Mode (std.): 40nm
  • Fast Mode: 100nm

• Additional manufacturer options:
  • High-resolution option (Write Mode 1)
  • Extended Focus Range
  • Variable Focal Depth
  • Optical (laser) Autofocus in addition to std. Pneumatic Autofocus
  • Greyscale Mode
  • (No backside alignment)

Documentation

Operating Procedures

• MLA150 - Standard Operating Procedure - updated Jan 5th 2022
  • Includes File-upload procedure, CAD Conversion, Exposure and Alignment.
• Large Image Patterning - one way to generate a GDS file out of an arbitrary image (eg. JPG, BMP, PNG etc.)
• Substrate Templates have been updated, reflecting allowed sample sizes for each focus mode.

Troubleshooting & Known Bugs

• See the above page for troubleshooting/recovery info and workarounds to known bugs.
• Double-side polished transparent substrates can sometimes produce difficulties, due to the exposure light reflecting from the wafer underside. Many users have found ways to make them work properly - contact staff if you need help with this.

Video Trainings

Video trainings are currently being re-recorded to reflect updated operating procedures - 2022-10-06 DDJ

Design Tools/Info

• Design Guidelines + Tips
• CAD Files and Templates
• Substrate Template Guidelines

Recipes

• Recipes > Lithography > Maskless Aligner MLA150
  • Starting recipes for various I-Line photoresists