Process Group - Process Control Data: Difference between revisions
Jump to navigation
Jump to search
(description of process control data) |
(move TOC below intro) |
||
Line 1: | Line 1: | ||
Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance. |
Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance. This is similar (but not identical to) [https://en.wikipedia.org/wiki/Statistical_process_control Statistical Process Control]. |
||
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
These are the same links found on individual tool pages, in the '''''Recipes > <<tool page>> > Process Control''''' section. |
||
__TOC__ |
|||
⚫ | |||
⚫ | |||
''Process Control Data for Nanofab Lithography/patterning tools.'' |
''Process Control Data for Nanofab Lithography/patterning tools.'' |
||
== |
==[[Stepper_Recipes#Stepper_3_.28ASML_DUV.29|Stepper #3 (ASML DUV)]]== |
||
*''The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.'' |
*''The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.'' |
Revision as of 17:04, 15 August 2023
Process Control Data are standardized process, run by staff, allowing for day-to-day or year-by-year comparisons of a tool's performance. This is similar (but not identical to) Statistical Process Control.
These are the same links found on individual tool pages, in the Recipes > <<tool page>> > Process Control section.
Lithography (Process Control Data)
Process Control Data for Nanofab Lithography/patterning tools.
Stepper #3 (ASML DUV)
- The Process Group regularly measures data on lithography Critical Dimension ("CD") and Wafer-stage Particulate Contamination for this tool, using a sensitive lithography process that will reveal small changes in Dose repeatability and wafer flatness.
- Plots of CD Repeatability
- Data for CD Uniformity and Particulate Contamination
Deposition (Process Control Data)
Process Control data for various deposition tools in the lab.
PECVD #1 (PlasmaTherm 790)
PECVD #2 (Advanced Vacuum)
ICP-PECVD (Unaxis VLR Dep)
- ICP-PECVD: Plots of SiO2 Films
- ICP-PECVD: Plots of Si3N4 Films
- ICP-PECVD: SiO2 Low-Dep Rate (LDR)
- ICP-PECVD: SiO2 High-Dep Rate (HDR)
- ICP-PECVD: Si3N4
- ICP-PECVD: Si3N4 Low-Stress
Ion Beam Sputter Deposition (Veeco Nexus)
Old Data (Pre 2022)
Old data in a different format can be found below:
Etching (Process Control Data)
Process Control data for various dry etching tools in the lab.
PlasmaTherm SLR Fluorine Etcher
OLD Process Control Data
- SiO2 Etching with CHF3/CF4 (FL-ICP) - No data prior to 2023-01-20
Panasonic ICP #1
Old Process Control Data
- SiO2 Etch with CHF3/CF4 (Panasonic 1) - No data prior to 2023-01-20
Panasonic ICP#2
Old Process Control Data
- SiO2 Etching with CHF3/CF4 - ICP2 - No data prior to 2023-01-20
Unaxis VLR Etch
Oxford PlasmaPro Cobra Etcher
Calibration / Process testing data taken using the "InP Ridge Etch" process: Cl2/CH4/H2 @ 60°C, 1cm piece with ~50% SiO2 hardmask.
- "Std InP Ridge Etch" Cl2/CH4/H2/60°C - Etch Data Tables
- "Std InP Ridge Etch" Cl2/CH4/H2/60°C - Plots
Old Process Control Data
- InP Ridge Etch with Cl2/CH4/H2 @ 60°C - No data prior to 2023-01-20