ICP Etch 1 (Panasonic E646V): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=ICP2.jpg
|picture=ICP2.jpg
|type = Dry Etch
|type = Dry Etch
|super= Lee Sawyer
|super= Lee Sawyer
|super2= Don Freeborn
|location=Bay 2
|location=Bay 2
|description = ?
|description = ICP Etching and Ashing Multi-Chamber Tool
|manufacturer = Panasonic Factory Solutions, Japan
|manufacturer = Panasonic Factory Solutions, Japan
|model=E646V
|materials =
|materials =
|toolid=22
|toolid=22
}}
}}
= About =
==About==


This is a three-chamber tool for etching of a variety of materials.
This is a three-chamber tool for etching of a variety of materials.
Line 15: Line 17:
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.
Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.


This chamber has the following gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, and O<sub>2</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously).
This chamber has the following dedicated gas sources: Cl<sub>2</sub>, BCl<sub>3</sub>, and O<sub>2</sub>

The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N<sub>2</sub>/He, CHF<sub>3</sub>/Ar and CF<sub>4</sub> /SF<sub>6</sub>


The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.
The system can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.

The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.


Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.
Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF<sub>4</sub> and O<sub>2</sub> for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.


Chamber three "Rinse Chamber" is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system.
Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline.


The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heatsinking. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.
The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heat-sinking.


In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.
⚫
= Detailed Specifications =


⚫
==Detailed Specifications==
⚫
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber

⚫
*Multiple 6” diameter wafer capable system
⚫
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
⚫
*Multiple 6” diameter wafer capable system
*Pieces possible by mounting to 6” wafer
*Pieces possible by mounting to 6” wafer

<u>Etch Chamber:</u>
<u>Etch Chamber:</u>

*Optimal Emission Monitoring
*Optimal Emission Monitoring
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
*Cl<sub>2</sub>, BCl<sub>3</sub>, N<sub>2</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>) in etch chamber
*Cl<sub>2</sub>, BCl<sub>3</sub>, O<sub>2,</sub> (CHF<sub>3</sub> or Ar), (CF<sub>4</sub> or SF<sub>6</sub>), and (N<sub>2</sub> or He) in etch chamber
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
*Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
*Laser Etch Monitoring: [[Laser Etch Monitoring|Intellemetrics LEP 500]]

<u>Ashing Chamber:</u>
<u>Ashing Chamber:</u>
⚫
*2000 W ICP ashing chamber
⚫
*RT - 250°C sample temperature for ashing
⚫
*Ashing pressures 50 mT - 500 mT
⚫
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
⚫
*Room Temp. to 270°C etching. Default 50°C.


⚫
*2000 W ICP ashing chamber
⚫
=Documentation=
⚫
*RT - 250°C sample temperature for ashing
*{{fl|ICP1-Gas-Change-CHF3-AR.pdf|Gas Change Procedure (CHF3 & AR)}}
⚫
*Ashing pressures 50 mT - 500 mT
*{{fl|Gas Change CF4-SF6-CF4.pdf|Gas Change Procedure (CF4 & SF6)}}
⚫
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber
⚫
*{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}
⚫
*Room Temp. to 270°C etching. Default 50°C.
*{{fl|Changing N2 to He.pdf|Gas Change Procedure (N2 & He)}}

⚫
==Documentation==

⚫
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf]{{file|Panasonic 1 instructions.pdf|Panasonic _1_instructions.pdf}}
*[https://wiki.nanotech.ucsb.edu/w/images/0/0a/ICP_-1_Gas_Change_CF4-SF6-CF4.pdf ICP #1 Gas Change Procedure: CF<sub>4</sub>-SF<sub>6</sub>-CF<sub>4</sub>]
*[https://wiki.nanotech.ucsb.edu/w/images/8/8c/ICP_-1_Gas_Change_CHF3-Ar.pdf ICP #1 Gas Change Procedure: CHF<sub>3</sub>-Ar-CHF<sub>3</sub>]
*[https://wiki.nanotech.ucsb.edu/w/images/f/fa/ICP_-1_Gas_Change_N2-He-N2.pdf ICP #1 Gas Change Procedure: N<sub>2</sub>-He-N<sub>2</sub>]
*[https://wiki.nanotech.ucsb.edu/w/images/3/3a/ICP_-1_Rules_%26_Important_Notes.pdf ICP #1 Rules and Important Notes]
*[https://wiki.nanofab.ucsb.edu/w/images/4/48/ICP_-1_Standard_Etch_Recipes.pdf ICP #1 Standard Recipes]
*[https://wiki.nanotech.ucsb.edu/w/images/d/de/ICP_-1_Wafer_Type_Change.pdf ICP #1 Wafer Type Change Procedure]
*[[Laser Etch Monitoring|Laser Etch Monitor procedures]]

==Recipes==

*[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E626I.29|'''Recipes > Dry Etching > ICP Etch 1''']] page lists all qualified and contributed recipes for this tool.
**Starting point recipes for ICP#1
*[[ICP Etching Recipes#Process Control Data .28Panasonic 1.29|Process Control Data]]
**''Historical Data'' records "calibration" etches to test tool performance.
*The [[Dry Etching Recipes|'''Recipes > Dry Etching Recipes''']]
**Master table lists all contributed '''dry etches vs etched materials''' across tools.

Latest revision as of 22:18, 7 February 2024

ICP Etch 1 (Panasonic E646V)
ICP2.jpg
Location Bay 2
Tool Type Dry Etch
Manufacturer Panasonic Factory Solutions, Japan
Model E646V
Description ICP Etching and Ashing Multi-Chamber Tool
Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Don Freeborn

Recipes Dry Etch Recipes
SignupMonkey: Sign up for this tool


About

This is a three-chamber tool for etching of a variety of materials.

Chamber one "Etch Chamber" is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching.

This chamber has the following dedicated gas sources: Cl2, BCl3, and O2

The chamber also has the following gas sources, where two of the lines must be manually switched between the two options shown (gasses can't be used simultaneously): N2/He, CHF3/Ar and CF4 /SF6

The system can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, and is load-locked for fast pump down.

The in-situ laser monitor installed on the etch chamber allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber.

Chamber two, "Ashing Chamber" is a 2000 W ICP chamber configures for plasma "ashing" of photoresist and other materials such as BCB. The substrate is not biased for isotropic etching, and the chamber has CF4 and O2 for the gases. This is especially well-suited for omni-directional etching of photoresist/PR removal, or BCB etch-back.

Chamber three "Rinse Chamber" is a DI rinsing chamber that is not used/offline.

The system accepts 6” wafers with SEMI-std. flats. Users often mount smaller pieces to the wafers, usually with easily removable oil to improve uniform heat-sinking.

In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • Multiple 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer

Etch Chamber:

  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, O2, (CHF3 or Ar), (CF4 or SF6), and (N2 or He) in etch chamber
  • Room Temp - 80°C sample temperature for etching. Default 12°C Chuck Temperature.
  • Laser Etch Monitoring: Intellemetrics LEP 500

Ashing Chamber:

  • 2000 W ICP ashing chamber
  • RT - 250°C sample temperature for ashing
  • Ashing pressures 50 mT - 500 mT
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Room Temp. to 270°C etching. Default 50°C.

Documentation

Recipes

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