PECVD 2 (Advanced Vacuum): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=PECVD2.jpg
|picture=PECVD2.jpg
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Don Freeborn
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-7975
|phone=(805)839-7975
|location=Bay 2
|location=Bay 2
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==About==
==About==


* '''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.
* '''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
* '''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
* '''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa.
*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
**These films alternate between thin (<10nm) compressive and tensile layers.
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].


==See Also==
==See Also==
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**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4

**''Historical (Process Control) Data is also shown here.''
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

===Process Control Data===

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]

Latest revision as of 20:09, 26 November 2024

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Location Bay 2
Tool Type Vacuum Deposition
Manufacturer Plasma-Therm
Description Vision 310 Advanced Vacuum PECVD
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Don Freeborn

Recipes Vacuum Deposition Recipes
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About

  • Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
  • Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  • Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  • Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
    • These films alternate between thin (<10nm) compressive and tensile layers.
    • The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

See Also

Documentation

Recipes & Historical Data

Process Control Data

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