PECVD 2 (Advanced Vacuum): Difference between revisions
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{{tool2|{{PAGENAME}} |
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|picture=PECVD2.jpg |
|picture=PECVD2.jpg |
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|type = Vacuum Deposition |
|type = Vacuum Deposition |
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|super= |
|super= Michael Barreraz |
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|super2= Don Freeborn |
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|phone=(805)839- |
|phone=(805)839-7975 |
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|location=Bay 2 |
|location=Bay 2 |
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|email=silva@ece.ucsb.edu |
|email=silva@ece.ucsb.edu |
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|description = Vision 310 Advanced Vacuum PECVD |
|description = Vision 310 Advanced Vacuum PECVD |
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|manufacturer = |
|manufacturer = Plasma-Therm |
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|materials = |
|materials = |
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|toolid=15 |
|toolid=15 |
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==About== |
==About== |
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This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases |
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. |
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*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. |
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*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. |
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== Recipes == |
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*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films. |
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**These films alternate between thin (<10nm) compressive and tensile layers. |
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* Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page: |
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**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]]. |
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** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]] |
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==See Also== |
==See Also== |
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*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page] |
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==Documentation== |
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*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions] |
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*[https://wiki.nanofab.ucsb.edu/w/images/6/68/PECVD2_STD_LS_Si3N4v4recipe_depositiontime.pdf Modifying Deposition Time in "STD LS-Si3N4v4" Recipe] |
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*[https://wiki.nanofab.ucsb.edu/w/images/1/1b/PECVD2_Recipe_Temperature_Change.pdf Modifying Deposition Temperature] |
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*[[Wafer Coating Process Traveler]] |
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*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]] |
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==Recipes & Data== |
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[[File:PECVD_SPC_Chart_Example.png|alt=SPC chart example|thumb|228x228px|Example Process Control Charts (SPC) for thin-film DepCals.]] |
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[[File:Surfscan_230113A7G2_after_low_particles.jpg|alt=screenshot of surfscan particle count|thumb|205x205px|Example particle counts taken on each film.]] |
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[[File:PECVD1_SiO2_F50_WaferMap_example.jpg|alt=Screenshot of Filmetrics F50 wafermap of typical DepCals film|thumb|215x215px|Example of DepCals Thickness/Refractive Index uniformity measurement (4% shown here).]] |
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===Process Control Data=== |
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*Process Control Charts: '''[[Process Group - Process Control Data#PECVD #1 (PlasmaTherm 790) - Process Control|Process Control > PECVD#1]]''' |
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**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 Plots of all data] |
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**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub> Data] |
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**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub> Data] |
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**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low-Stress Si<sub>3</sub>N<sub>4</sub> Data] |
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***[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data] |
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Latest revision as of 17:56, 29 September 2025
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About
- Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
- Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
- Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
- Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
- These films alternate between thin (<10nm) compressive and tensile layers.
- The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.
See Also
Documentation
- Operating Instructions
- Modifying Deposition Time in "STD LS-Si3N4v4" Recipe
- Modifying Deposition Temperature
- Wafer Coating Process Traveler
- For particle counting method, see the Surfscan Scanning Procedure
Recipes & Data
- Standard Recipes: Recipes > Deposition > PECVD #2
- A list of all available deposited films can be found here: Recipes > Vacuum Deposition Recipes
Process Control Data
- Process Control Charts: Process Control > PECVD#1