Contact Alignment Recipes: Difference between revisions

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=Notes=
=Notes=
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.
==Positive Resist==
⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.
==Negative Resist==
⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.

=[[Suss Aligners (SUSS MJB-3)]]=
=[[Suss Aligners (SUSS MJB-3)]]=
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.
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==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
⚫
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.
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{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|-bgcolor="#D0E7FF"
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Revision as of 20:24, 8 November 2012

Back to Lithography Recipes.

Notes

Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

Suss Aligners (SUSS MJB-3)

Positive Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 8” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 13” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 18” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 25” AZ300MIF 50”
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 60” AZ300MIF 70”

Negative Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 5” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 10” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 10” 110°C/60” AZ300MIF 60”

Contact Aligner (SUSS MA-6)

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