HF Vapor Etch: Difference between revisions
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= About = |
= About = |
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The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO<sub>2</sub> layer below) with the use of Al<sub>2</sub>O<sub>3</sub>, Al or some other metal as an etch mask at room temperature. The tool uses vapor HF (VHF), EtOH |
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The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial layer below), in which Si or Ge or even some metals, such as Mo, can be isotropically dry etched using gaseous XeF<sub>2</sub> (no plasma enhancement or heating is needed) with the use of photoresist or SiO<sub>2</sub> or Al as an etch mask at room temperature. For users who want to etch through or very deep into a Si wafer, they should use the Si Deep RIE tool in the lab. The XeF<sub>2</sub> etch process is a purely chemical one and usually results in a rough etched surface. The tool is operated in a pulsed mode in which the etch chamber is repeatedly filled with XeF<sub>2</sub> gas and, then, pumped out (to 0.3 Torr). You can also add N<sub>2</sub> gas, together with XeF<sub>2</sub> gas, into the etch chamber for some applications. There is a microscope attached to this tool, with which you can monitor the etch process of your sample. You can change the number of etch cycles during a run, which will be effective in that run. Also, you can manually stop a run based on microscope observations. |
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=Documentation= |
=Documentation= |
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*[[media:Xactic-XetchX3-System-Manual.pdf|System Manual]] |
*[[media:Xactic-XetchX3-System-Manual.pdf|System Manual]] |
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Revision as of 18:33, 30 January 2014
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About
The applications of this tool are mainly in MEMS-device fabrication areas (releasing a MEMS structure by etching a sacrificial SiO2 layer below) with the use of Al2O3, Al or some other metal as an etch mask at room temperature. The tool uses vapor HF (VHF), EtOH