ICP-PECVD (Unaxis VLR): Difference between revisions
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= About = |
= About = |
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This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be |
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized. |
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= Detailed Specifications = |
= Detailed Specifications = |
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Revision as of 21:26, 14 March 2014
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About
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.
Detailed Specifications
- 1000W ICP source, 600W RF Sample Bias Power Supply
- 50 - 350°C sample temperature
- 100% SiH4, Ar, N2, O2
- Multiple 4” diameter wafer capable system
- Pieces possible by mounting or placing on 4 ” wafer