Vacuum Deposition Recipes: Difference between revisions

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==Thermal Evaporation==
==Thermal Evaporation==


==Plasma Enhanced Chemical Vapor Deposition (PECVD)==
== Plasma Enhanced Chemical Vapor Deposition (PECVD) ==

=== SiN deposition ===

#'''Clean''' (30CLN_SN)
##Initial t=10", p=2x10-2, T=250C
##N2 Purge t=30", p=300mT
##evacuate, base pressure=2x10-2, t=10"
##loop
##gas stabilization, t=30"
##etch chamber, t=30'
##evacuate, t=10"
##N2 purge
##evacuate
##loop
##SiN gas stabilization
##SiN deposition( 200A coat)
##evacuate
##N2purge, t=30"
##end
#'''SiN deposition''' (SiN_10) 130.8 A/min
##Initial t=10"
##N2 purge t=30"
##evacuate, t=10"
##loop
##SiN gas stabilization, t=30"
##SiN deposition t=8'11.2"
##evacuate, t=10"
##N2 purge t=30"
##evacuate t=10"
##loop


==Atomic Layer Deposition (ALD)==
==Atomic Layer Deposition (ALD)==

Revision as of 20:08, 9 July 2012

This table can be used to help located the needed recipe.

Vacuum Deposition Recipes

 E-Beam Evaporation Sputtering Thermal Evaporation Plasma Enhanced Chemical
Vapor Deposition (PECVD) 		Atomic Layer Deposition Ion-Beam Deposition (IBD) Molecular Vapor Deposition
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 1 (Custom) Sputter 2
(SFI Endeavor) 		Sputter 3 Sputter 4 Sputter 5 (Lesker AXXIS) Thermal 1 Thermal 2 PECVD 1
(PlasmaTherm 790) 		PECVD 2
(Advanced Vacuum) 		Unaxis VLR ICP-PECVD
Ag Y
Al
















Al2O3
AlN
















Au
B
















Co
Cr
















Cu
Fe
















Ge
Hf
















HfO2
In
















Ir
ITO
Mo
Bn
Ni
Pd
Pt
Ru
Si
SiN
SiO2
SiOxNy
Sn
SrF2
Ta
Ta2O5
Ti
TiN
TiO2
V
W
Zn
ZnO2
Zr
ZrO2

Recipes

E-Beam Evaporation

Recipe 1

  1. Step 1 ....
  2. Step 2...

Recipe 2

Sputtering

Thermal Evaporation

Plasma Enhanced Chemical Vapor Deposition (PECVD)

SiN deposition

  1. Clean (30CLN_SN)
    1. Initial t=10", p=2x10-2, T=250C
    2. N2 Purge t=30", p=300mT
    3. evacuate, base pressure=2x10-2, t=10"
    4. loop
    5. gas stabilization, t=30"
    6. etch chamber, t=30'
    7. evacuate, t=10"
    8. N2 purge
    9. evacuate
    10. loop
    11. SiN gas stabilization
    12. SiN deposition( 200A coat)
    13. evacuate
    14. N2purge, t=30"
    15. end
  2. SiN deposition (SiN_10) 130.8 A/min
    1. Initial t=10"
    2. N2 purge t=30"
    3. evacuate, t=10"
    4. loop
    5. SiN gas stabilization, t=30"
    6. SiN deposition t=8'11.2"
    7. evacuate, t=10"
    8. N2 purge t=30"
    9. evacuate t=10"
    10. loop

Atomic Layer Deposition (ALD)

Ion-Beam Deposition (IBD)

Molecular Vapor Deposition (MVD)

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